utc 2N5088/2n5089 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r201-040,a npn general purpose amplifier description the device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 a to 50ma. to-92 1 1:emitter 2:base 3:collector maximum ratings (ta=25 c, unless otherwise noted) rating symbol 2N5088 2n5089 unit collector-emitter voltage v ceo 30 25 v collector-base voltage v cbo 35 30 v emitter-base voltage v ebo 4.5 v collector current-continuous ic 100 ma operating and storage junction temperature range t j, t stg -55 ~ +150 c note 1: these ratings are based on a maximum junction temperature of 150 degrees c. note 2: these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics (ta=25 c, unless otherwise noted) parameter symbol max unit total device dissipation derate above 25 c p d 625 5 mw mw/ c thermal resistance, junction to case r jc 83.3 c/w thermal resistance, junction to ambient r ja 200 c/w
utc 2N5088/2n5089 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r201-040,a electrical characteristics (ta=25 c, unless otherwise noted) parameter symbol test conditions min max unit off characteristics collector-emitter breakdown voltage (note) 2N5088 2n5089 v (br)ceo i c =1.0ma, i b =0 30 25 v v collector-base breakdown voltage 2N5088 2n5089 v (br)cbo i c =100 a, i e =0 35 30 v v collector cut-off current 2N5088 2n5089 i cbo v cb =20v, i e =0 v cb =15v, i e =0 50 50 na na emitter cutoff current i ebo v eb =3.0v, i c =0 v eb =4.5v, i c =0 50 100 na na on characteristics dc current gain h fe v ce =5.0v, i c =100 a 2N5088 2n5089 v ce =5.0v, i c =1.0ma 2N5088 2n5089 v ce =5.0v, i c =10ma 2N5088 (note) 2n5089 300 400 350 450 300 400 900 1200 collector-emitter saturation voltage v ce (sat) i c =10ma, i b =1.0ma 0.5 v base-emitter on voltage v be (on) i c =10ma, v ce =5.0v 0.8 v small signal characteristics current gain-bandwidth product f t v ce =5.0ma, ic=500 a, f=20mhz 50 mhz collector-base capacitance ccb v cb =5.0v, i e =0, f=100khz 4 pf emitter-base capacitance ceb v eb =0.5v, ic=0, f=100khz 10 pf small-signal current gain 2N5088 2n5089 h fe v ce =5.0v, ic=1.0ma, f=1.0khz 350 450 1400 1800 noise figure 2N5088 2n5089 nf v ce =5.0v, ic=100 a, r s =10k ? , f=10khz to 15.7khz 3.0 2.0 db db note: pulse test: pulse width 300 s, duty cycle 2.0%.
utc 2N5088/2n5089 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 3 qw-r201-040,a typical characteristics
utc 2N5088/2n5089 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 4 qw-r201-040,a
utc 2N5088/2n5089 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 5 qw-r201-040,a
utc 2N5088/2n5089 npn epitaxial silicon transistor utc unisonic technologies co., ltd. 6 qw-r201-040,a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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